Q- Switched Nd:YAG Laser Annealing of Phosphorus Diffused Silicon Photodiodes
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Abstract
Improvement of optoelectrical characteristics of phosphorus diffused silicon photodiodes by Q-switched Nd:YAG laser pulses was investigated. Laser pulses have dissolved the precipitation of phosphorus resulted during thermal diffusion process. The experimental data show that responsivity higher than (0.32 A/W) at 850 nm can be achieved after laser annealing with (1.5 MW/cm2) for 6 shots.
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“Q- Switched Nd:YAG Laser Annealing of Phosphorus Diffused Silicon Photodiodes” (2003) Iraqi Journal of Laser, 2(A), pp. 1–5. doi:10.31900/ijl.v2iA.158.
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How to Cite
“Q- Switched Nd:YAG Laser Annealing of Phosphorus Diffused Silicon Photodiodes” (2003) Iraqi Journal of Laser, 2(A), pp. 1–5. doi:10.31900/ijl.v2iA.158.