Q- Switched Nd:YAG Laser Annealing of Phosphorus Diffused Silicon Photodiodes
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2003-06-11
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Abstract
Improvement of optoelectrical characteristics of phosphorus diffused silicon photodiodes by Q-switched Nd:YAG laser pulses was investigated. Laser pulses have dissolved the precipitation of phosphorus resulted during thermal diffusion process. The experimental data show that responsivity higher than (0.32 A/W) at 850 nm can be achieved after laser annealing with (1.5 MW/cm2) for 6 shots.
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[1]
R. A. Ismail, W. K. Hamoudi, and S. M. Abdul Baqi, “Q- Switched Nd:YAG Laser Annealing of Phosphorus Diffused Silicon Photodiodes”, IJL, vol. 2, no. A, pp. 1–5, Jun. 2003, doi: 10.31900/ijl.v2iA.158.
