Q- Switched Nd:YAG Laser Annealing of Phosphorus Diffused Silicon Photodiodes

  • Raid A. Ismail
  • Walid K. Hamoudi
  • Shaima’ M. Abdul Baqi

Abstract

Improvement of optoelectrical characteristics of phosphorus diffused silicon photodiodes by Q-switched Nd:YAG laser pulses was investigated. Laser pulses have dissolved the precipitation of phosphorus resulted during thermal diffusion process. The experimental data show that responsivity higher than (0.32 A/W) at 850 nm can be achieved after laser annealing with (1.5 MW/cm2) for 6 shots.

Published
2003-06-11
How to Cite
Ismail, R., Hamoudi, W. and Abdul Baqi, S. (2003) “Q- Switched Nd:YAG Laser Annealing of Phosphorus Diffused Silicon Photodiodes”, Iraqi Journal of Laser, 2(A), pp. 1- 5. Available at: http://ijl.uobaghdad.edu.iq/index.php/IJL/article/view/158 (Accessed: 26November2019).
Issue
Vol 2 No A (2003): Vol 2 No A (2003): Part A Vol.2 2003
Section
Articles